carrier mobility中文是什么意思

• 单位载流子平均漂移速度
• 载劣迁移率
• 载体迁移率

• "carrier"中文翻译    n. 1.运送人，搬夫；负荷者；使役，〔美国〕信差，邮递 ...
• "mobility"中文翻译    n. 群众。 mobility and nobility ...
• "charge carrier mobility" 中文翻译 :    载流子迁移率
• "mobility" 中文翻译 :    n. 1.可动性，活动性，能动性。 2.灵活性，可变动性。 3.【物理学】动性，迁移率；【化学】淌度；【军事】运动性，机动性。 the ionic mobility 离子迁移率[淌度]。 n. 群众。 mobility and nobility 〔戏谑语〕老百姓和贵族。
• "carrier" 中文翻译 :    n. 1.运送人，搬夫；负荷者；使役，〔美国〕信差，邮递员；送报人；〔英国〕运输行，运输业者。 2.传书鸽，信鸽。 3.(车后的)货架；吊架；托架。 4.水管，引水沟。 5.运载工具；搬运机；移动滑车。 6.【医学】带菌者，病媒。 7.航空母舰。 8.【电学】载波；载流子；【拓】承载子；【化学】载体，填料；导染剂。 a mail [letter] carrier邮递员。 a band carrier传送带。
• "for the carrier" 中文翻译 :    交承运人
• "no carrier" 中文翻译 :    （无载波）原因分析; 没有载波讯号
• "on carrier" 中文翻译 :    集装箱陆地运输承运人
• "t carrier" 中文翻译 :    t载波系列
• "t-carrier" 中文翻译 :    t载波系列; 传输载波
• "absolute mobility" 中文翻译 :    绝对淌度
• "acceleration mobility" 中文翻译 :    加速度导纳
• "acoustic mobility" 中文翻译 :    声迁移率
• "air mobility" 中文翻译 :    空中输送能力
• "anodal mobility" 中文翻译 :    向阳极运动
• "atomic mobility" 中文翻译 :    原子迁移率
• "attention mobility" 中文翻译 :    注意转移
• "backbone mobility" 中文翻译 :    主链运动性
• "backpack mobility" 中文翻译 :    航天员使用背包式火箭以动机的机动能力
• "bell mobility" 中文翻译 :    贝尔移动公司
• "bubble mobility" 中文翻译 :    磁泡迁移率
• "capital mobility" 中文翻译 :    资本的流动性; 资本流动性
• "cataphoretic mobility" 中文翻译 :    阳离子电泳迁移率
• "cell mobility" 中文翻译 :    细胞运动性
• "chain mobility" 中文翻译 :    链链流动性

• We represent a temperature model of surface carrier mobility of short channel most after thinking about kinds of dispersion effect
  在考虑了各种散射效应对迁移率的影响后，提出了短沟道most表面载流子迁移率的温度模型。
• It was found that , the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor , both the charge density and the resistivity increase with x value , while the carrier mobility decreases with x
  晶体的电学性能，发现生长态的mncd晶体均为p型半导体。随着组分x值的增大，载流于的浓度np减小，迁移率p 。
• The carrier mobility of the s doped n - type diamond had the same order as the s doped 1 b diamond and the changes of the character of diamond along with the changes of intensity of s doped in diamond were investigated
  其中，采用cvd技术制备的以硫为施主的n型金刚石薄膜的迁移率与b单晶金刚石硫掺杂的迁移率达到了相同的量级。
• The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility , larger transconductance , stronger drive capability and hence faster circuit speed
  与体si器件相比,采用sige材料的异质结器件已经在许多方面显示出了强大的优势:譬如更大的载流子迁移率，更大的跨导，更强的电流驱动能力以及更快的电路速度等等。
• It is pointed that inversion - layer mobility is different from field - effect mobility for sic mosfet . and a relationship has been established between the ratio of the experimentally - determined field - effect mobility to the actual inversion - layer carrier mobility and interface states
  明确指出碳化硅器件的反型层迁移率和实验测定的场效应迁移率不能等同，并给出了以上二者的比值与界面态密度的定量关系。
• The recent development of organic electron transport materials are reviewed as well . several technologies for charge carrier mobility measurement are summarized and compared , and a series of basic principles for designing high - performance organic electron transport materials are suggested as well
  本章还重点综述了有机电子传输材料研究的最新进展，总结和比较了有机材料载流子迁移率的测试方法，并提出了设计高性能有机电子传输材料的若干原则。
• In this paper , the subband structure in the inversion layer is constructed by solving the self - consistent schr ? dinger equation , thus the carrier effective mass and scattering rate can be obtained . furthermore , taking account for the carrier density in each subband , we establish carrier mobility model in strained - si mosfet
  本文通过求解自洽薛定谔方程,确定了应变硅mosfet反型层的子能带结构,在此基础上经进一步计算得到子能带内载流子的有效质量和散射几率,综合考虑各子能带上的载流子的浓度分布,建立了应变硅mosfet载流子迁移率的解析模型。
• Secondly , we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration , square resistance and carrier mobility ) . after comparing and analyzing , we can know that the electrical properties were affected by the difference of mn dose , the implantation of c and the annealing temperature
  其次，利用霍尔测试方法测量了每种离子注入样品的电性质(方块载流子浓度、方块电阻及载流子迁移率) ，通过比较分析了解到mn元素注入剂量、 c元素的注入以及退火温度的不同，都会对样品的电性质产生影响。
• Strained - soi mosfet , which appears recently , takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ) . it has shown advantages over bulk sample in enhanced carriers mobility , as well as higher transconductance , stronger drive capability and reduced parasitic capacitances . these properties make it a promising candidate for improving the performance of microelectronics devices
  Strained - soimosfet是最近几年才出现的新型器件,它将soi材料和sige材料结合在一起,与传统体硅器件相比,表现出载流子迁移率高、电流驱动能力强、跨导大、寄生效应小等优势,特别适用于高性能、高速度、低功耗超大规模集成电路。
• Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature , in the range of the annealing temperature from 650 ? to 850 ? , which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing . furthermore , the square carrier concentration decreased , and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature . these results indicated that the second phase such as mnga , mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature , so the mn + ions which can provide carriers decreased
  由实验结果可以知道在退火温度为650 850范围内，样品的载流子迁移率随着退火温度的提高呈上升趋势，说明杂质元素的注入对样品造成晶格损伤，但退火对这些损伤具有修复作用；此外，随着退火温度的上升，样品的方块载流子浓度不断下降，加c样品的方块电阻不断上升，这都是因为随着退火温度的提高，掺入的mn ~ +离子不再提供载流子，而是形成了mnga 、 mnas等磁性第二相。

• carrier mobility in Hindi
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• carrier mobilityとは意味キャリア移動度｛いどうど｝